1 3 2 10.2 0.2 |? 3 . 8 0 . 1 5 2.8 0.1 19.0 0.5 pin 3.5 0.3 0.9 0.1 2.5 0.1 13.8 0.5 2.6 0.2 0.5 0.1 8.9 0.2 1.4 0.2 4.5 0.2 pin 1 pin 3 case pin 2 positive ct negative ct suffix "a" case pin 2 pin 3 pin 1 pin 1 pin 3 case pin 2 doubler suffix "d" di m en s i o ns i n m i lli m ete rs features mechanical data mounting position: any maximum ratings and electrical characteristics sr 2060ct units maximum recurrent peak reverse voltage v rrm 60 v working peak reverse voltage v rms 42 v maximum dc blocking voltage v dc 60 v maximum average f orw ard rectified current v 9.5mm lead length, @ t a =100 i f(av) a p eak f o r w a r d s u r ge c u r r e nt 8.3 m s s ing l e h a l f v sine-w ave superimposed on rated load v (jedec method) @t j =125 i fsm a maximum instantaneous f orw ard voltage per leg @ 10a(note1) v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 operating junction temperature range t j storage temperature range t stg sr2020ct - - - sr2060ct 35 20 30 40 50 sr 2030ct polarity: as marked to-220ab - 5 5 --- + 15 0 note: 1. pulse test:300us pulse width,1% duty cy cle. 21 28 ma 50.0 14 high surge capability - 5 5 --- + 15 0 the plastic material carries u/l recognition 94v-0 i r 150.0 0.75 0.65 1.0 low forward voltage drop,low switching losses 20.0 30 40 sr 2020ct sr 2040ct sr 2050ct 50 case:jedec to--220ab,molded plastic terminals: leads ,solderable per mil- std- 111 j kkn kkkk 202, method 208 reverse voltage: 20 - 60 v forward current: 20 a 20 weight: 0.08ounce, 2.24 grams s i n g l e ph a s e , h a l f w a v e , 6 0 h z , r e s i s t i v e or i ndu c t i v e l o a d. f or c a pa c i t i v e l oa d , de ra t e by 20 % . ratings at 25 ambient temperature unless otherwise specified. metal-semiconductor junction with guard ring dual schottky rectifiers epitaxial construction for use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications diode semiconductor korea www.diode.kr
.01 50 .4 .5 .9 1.1 1 .6 1.0 .7 .8 sr2020ct-sr2040ct 0.1.2 .3 1.2 .1 10 SR2050CT-sr2060ct t j =125 t j =25 pulse width = 300 ?? t j =75 ?? t j =125 ?? .01 40 20 sr2020ct-sr2040ct SR2050CT-sr2060ct 100 1 1 0 1000 4000 100 0.1 t j =25 sr2020ct-sr2040ct SR2050CT-sr2060ct 0 5 15 10 25 20 0 50 100 150 30 resistive or inductive load amperes milliamperes amperes amperes transient thermal impedance, /w pulse duration, sec junction capacitance, pf fig.3 -- typical instantaneous forward characteristics per leg reverse voltage, volts fig.5 -- typical junction capacitance fig.6 -- typical transient thermal impedance number of cycle at 60hz instantaneous forward voltage, volts instantaneous forward current peak forward surge current fig.4 -- peak forward surge current sr2020ct - - - sr2060ct case temperature, percent of rated peak reverse voltage, % average forward current f i g . 2 - - t y p i cal r e v e r s e ch a rac t e r i s t i cs per leg fig.1 --forward current derating curve instantaneous reverse current 200 1 5 10 60 80 140 120 160 180 50 100 t j =t j max. 8.3ms single half sine-wave (jedec method) 100 40 0.1 1 0 . 01 0 . 1 10 1 10 100 1 0 0 www.diode.kr diode semiconductor korea
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